SIDR392DP-T1-GE3

Power MOSFET, N Channel, 30 V, 100 A, 470 µohm, PowerPAK SO, Surface Mount
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Order Code
2932895
Manufacturer
Manufacturer Part No
SIDR392DP-T1-GE3
Country of Origin
CN
Weight
0.003 Kg
Technical Datasheet:
Specifications
tariffCode :
85411000
rohsCompliant :
YES
hazardous :
false
rohsPhthalatesCompliant :
YES
Rds(on) Test Voltage :
10V
Transistor Case Style :
PowerPAK SO
Gate Source Threshold Voltage Max :
2.2V
No. of Pins :
8Pins
usEccn :
EAR99
Drain Source Voltage Vds :
30V
MSL :
MSL 1 - Unlimited
Product Range :
TrenchFET Gen IV
euEccn :
NLR
Channel Type :
N Channel
Power Dissipation :
125W
Qualification :
-
productTraceability :
No
Continuous Drain Current Id :
100A
Operating Temperature Max :
150°C
Transistor Mounting :
Surface Mount
Drain Source On State Resistance :
470µohm
SVHC :
Lead (07-Nov-2024)