SIS890ADN-T1-GE3

Power MOSFET, N Channel, 100 V, 24.7 A, 0.021 ohm, PowerPAK 1212, Surface Mount
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Order Code
3587062
Manufacturer
Manufacturer Part No
SIS890ADN-T1-GE3
Country of Origin
CN
Weight
0.000001 Kg
Technical Datasheet:
Specifications
tariffCode :
85411000
rohsCompliant :
YES
hazardous :
false
rohsPhthalatesCompliant :
YES
Rds(on) Test Voltage :
10V
Transistor Case Style :
PowerPAK 1212
Gate Source Threshold Voltage Max :
2.5V
No. of Pins :
8Pins
usEccn :
EAR99
Drain Source Voltage Vds :
100V
MSL :
MSL 1 - Unlimited
Product Range :
TrenchFET Gen IV
euEccn :
NLR
Channel Type :
N Channel
Power Dissipation :
39W
Qualification :
-
productTraceability :
No
Continuous Drain Current Id :
24.7A
Operating Temperature Max :
150°C
Transistor Mounting :
Surface Mount
Drain Source On State Resistance :
0.021ohm
SVHC :
Lead (07-Nov-2024)