SISS63DN-T1-GE3

Power MOSFET, P Channel, 20 V, 127.5 A, 0.0022 ohm, PowerPAK 1212-8S, Surface Mount
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Order Code
3280624
Manufacturer
Manufacturer Part No
SISS63DN-T1-GE3
Country of Origin
CN
Weight
0.000123 Kg
Technical Datasheet:
Specifications
tariffCode :
85411000
rohsCompliant :
YES
hazardous :
false
rohsPhthalatesCompliant :
YES
Rds(on) Test Voltage :
10V
Transistor Case Style :
PowerPAK 1212-8S
Gate Source Threshold Voltage Max :
1.5V
No. of Pins :
8Pins
usEccn :
EAR99
Drain Source Voltage Vds :
20V
MSL :
MSL 1 - Unlimited
Product Range :
TrenchFET Gen III
euEccn :
NLR
Channel Type :
P Channel
Power Dissipation :
65.8W
Qualification :
-
productTraceability :
No
Continuous Drain Current Id :
127.5A
Operating Temperature Max :
150°C
Transistor Mounting :
Surface Mount
Drain Source On State Resistance :
0.0022ohm
SVHC :
Lead (07-Nov-2024)